W. Myles:Theses &
highlighting successful careers of several former
listing several former
students who are "missing". If you
are, please contact me at Charley.Myles@ttu.edu. Thanks! NOTE: My PhD
Nenghabi, passed away unexpectedly in January, 2009.
In May, 2009, TTU awarded him a posthumous PhD!!
A Memorial web page for him is under construction Here.
who finished the Physics MSin at Texas
Tech. 2. 10 who finished the
PhysicsPhD, 1 who received it posthumously, & 1 who finished all BUT
who finished the PhD
at the U. of
Southern Cal. 1 inPhysics,
Engineering & 2 inMaterials
Science. 3. 2 who
completed thePhysics Diplome (roughly
equivalent to our MS) at
Federal Institute of
in Physics at Texas
of Electronic Spectra in
Linear Quaternary Alloys."
2.L. Ricks Hauenstein,
1988. "Theory of
Optical Cross Sections of Deep Level Impurities in III-V
3.Xin Zhang, 1993.
"Deep levels in II-VI
Semiconductor Alloys, Including Lattice Relaxation Effects."
Ha, 1997. "Molecular Dynamics Study of the
Staebler-Wronski Effect in Hydrogenated Amorphous Silicon Using Large
in Physics at Texas
"Chemical Trends for Deep
Levels Associated with Vacancy-Impurity Complexes in Semiconductors."
C. Ford, 1986.
"Theory of Alloy Broadening
of Deep Electronic Energy Levels in Ternary Semiconductor Alloys."
3.Jeffrey R. Gregg,
"Electronic Properties of
III-V Semiconductor Alloys." 4.Sylvester N. Ekpenuma,
and Microhardness of Semiconductor Alloys." 5.Wei-Gang Li, 1991.
"Effects of Lattice Relaxation
on Deep Levels in Semiconductors." 6.Sui-An Tang,
dissertation research, 1987-1993, all but
dissertation completed. "Impact Ionization and Avalanche
Semiconductors." 7.Ningyi Luo,
"Dual Femtosecond Ti:Safire Laser
for Ultrafast Optical Sampling Two-Color Pump/Probe Studies", (Joint
supervision with G.W.
Robinson). 8.Young K. Park,
Simulations of Defect Formation in Hydrogenated Amorphous Silicon." 9.Samsoo Kang, 1998.
"Simulation of High Field
Transport in Photoconductive Semiconductor Switches." 10.Kenneth E.
"A Theory of
Lock-on and Breakdown in Photoconductive Semiconductor Switch
Materials." Dissertation. Graduation Photos.
"Theoretical Characterization of Type II
2009 (PhD Poshumously Awarded!)"First Principles Study of Si-Ge Clathrate
Alloys." Proposal. Memorial
at the University of Southern California
G. Snyder, 1986.
Indirect Gap III-IV Semiconductors." (Electrical
Engineering). 2.Hong-Hai Dai,1988. "A
Study of Radiative
Recombination and Related Properties of III-V Semiconductors."
(Physics). 3.Jung Hur, 1992. "A
of Lock-On and Other High
Electric Field Effects in Photoconductive Switches." (Electrical
Engineering). 4.Kathy (Xianyue) Gu, 2006. "GaAs,
SiC and GaN FET-Type
Switches for Pulsed Power Applications." (Materials
Shui, 2006. "FET-type Switches
for use in Repetitive Pulsed Power." (Materials
Physics Diplome at
the Swiss Federal Institute of Technology(EPFL Lausanne)
Calculation of the Size
Dependence of the Conduction Electron Spin Resonance g-Shift in a Small
Metal Particle." 2.Voh-Van-Nhuan,
Dependence of the Conduction
Electron Spin Resonance Spin-Lattice Relaxation Time in a Small Metal